Quantum Mechanical and Semi-Classical Electrostatics Characteristics on SOI (Silicon on Insulator) Trigates

  • Manu Mitra University of Bridgeport
Keywords: Quantum, Quantum Mechanical, Classical Electrostatics, SOI, Silicon on Insulators, Trigates

Abstract

Quantum mechanical model explains about the various kinds of atomic orbitals that are different in the amount of energy and shapes and classical electrostatics is the stationary electric charges. The charges are defined as positive and negative.

This paper discusses about Quantum mechanical and semi-classical electrostatic in a cross section (perpendicular) of a two dimensional trigate structures; its characteristics such as Quantum electron density, Classical electron density, classical potential distribution plots, its 6 wave functions for two different grids values are presented.

References

[1] Khan Academy. (2018). The quantum mechanical model of the atom. Retrieved from https://www.khanacademy.org/science/physics/quantum-physics/quantum-numbers-and-orbitals/a/the-quantum-mechanical-model-of-the-atom
[2] Oak Park School. (2018). Quantum Mechanical Model of the Atom. Retrieved from https://www.oakparkusd.org/cms/lib5/CA01000794/Centricity/Domain/863/QuantumMechanicalModel.pdf
[3] Colinge, J.-P & Alderman, John & Xiong, Weize & Cleavelin, Rinn. (2006). Quantum-mechanical effects in trigate SOI MOSFETs. Electron Devices, IEEE Transactions on. 53. 1131 - 1136. 10.1109/TED.2006.871872.
[4] Hyung-Seok Hahm; Andres Godoy (2015), "Quantum and Semi-classical Electrostatics Simulation of SOI Trigates," https://nanohub.org/resources/MCTrigate. (DOI: 10.4231/D3NP1WK34).
[5] F.J. Garcia Ruiz, A. Godoy, F. Gamiz, C. Sampedro, and L. Donetti, “A Comprehensive Study of the Corner Effects in Pi-Gate MOSFETs Including Quantum Effects” IEEE Trans. Electron Devices, vol. 54(12), pp. 3369-3377, 2007.
Published
2019-01-24
How to Cite
Mitra, M. (2019). Quantum Mechanical and Semi-Classical Electrostatics Characteristics on SOI (Silicon on Insulator) Trigates. Innovative Engineering and Physical Sciences, 2(1), 34-64. Retrieved from http://scitecresearch.com/journals/index.php/ieps/article/view/1688
Section
Articles